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MTBA5C10AQ8 Datasheet Preview

MTBA5C10AQ8 Datasheet

N & P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C744Q8
Issued Date : 2009.10.16
Revised Date : 2014.01.03
Page No. : 1/12
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTBA5C10AQ8
N-CH P-CH
BVDSS
100V -100V
ID 2.4A -2.2A
Description
RDSON(MAX.) 150mΩ 220mΩ
The MTBA5C10AQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTBA5C10AQ8
Outline
SOP-8
GGate SSource DDrain
Ordering Information
Device
MTBA5C10AQ8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA5C10AQ8
CYStek Product Specification




CYStech

MTBA5C10AQ8 Datasheet Preview

MTBA5C10AQ8 Datasheet

N & P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C744Q8
Issued Date : 2009.10.16
Revised Date : 2014.01.03
Page No. : 2/12
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current TA=25 °C, VGS=10V (-10V)
(Note 2) TA=100 °C, VGS=10V (-10V)
Pulsed Drain Current (Note 1)
Symbol
BVDSS
VGS
ID
IDM
Limits
N-channel P-channel
100 -100
±20 ±20
2.4 -2.2
1.5 -1.4
12 -10
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation
PD 1.6 (Note 2)
0.9 (Note 3)
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width10s.
3.Surface mounted on minimum copper pad, pulse width10s.
Value
40
78 (Note 2)
135 (Note 3)
Unit
°C/W
°C/W
°C/W
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
100
1.0
-
-
-
-
-
- - V VGS=0, ID=250μA
1.8 3.0 V VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0
- 1 μA VDS=80V, VGS=0
- 25 μA VDS=70V, VGS=0, Tj=125°C
121
125
150
160
mΩ
ID=2.4A, VGS=10V
ID=2A, VGS=5V
*GFS - 8 - S VDS=5V, ID=2.4A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
-
1237
-
- 38 - pF VDS=20V, VGS=0, f=1MHz
- 27 -
- 13 -
-
-
9
36
-
-
ns VDS=50V, ID=1A, VGS=10V, RG=6Ω
- 9-
- 18 -
- 4.2 - nC VDS=80V, ID=2.4A, VGS=10V
- 3.6 -
MTBA5C10AQ8
CYStek Product Specification


Part Number MTBA5C10AQ8
Description N & P-Channel Enhancement Mode Power MOSFET
Maker CYStech
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