MTBA5C10AQ8 Datasheet | CYStech

Description RDSON(MAX.) 150mΩ 220mΩ The MTBA5C10AQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all mercial-industrial surface mount applications. Features - Simple drive requirement - Low on-resistance - Fast switching speed - Pb-free lead plating and halogen-free package Equivalent Circuit Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTBA5C10AQ8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C744Q8 Issued Date : 2009.10.16 Revised Date : 2014.01.03 Page No. : 2/12 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current TA=25 °C, VGS=10V (-10V) (Note 2) TA=100 °C, VGS=10V (-10V) Pulsed Drain Current (Note 1) Symbol BVDSS Limits N-channel P-channel 100 -100 ±20 ±20 2.4 -2.2 1.5 -1.4 12 -10 Power Dissipation for Dual...