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CYStech

MTBA5C10V8 Datasheet Preview

MTBA5C10V8 Datasheet

N & P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C744V8
Issued Date : 2014.11.03
Revised Date :
Page No. : 1/13
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTBA5C10V8 BVDSS
N-CH
100V
ID@VGS=10V(-10V)
2.3A
RDSON@VGS=10V(-10V) typ. 126.5mΩ
RDSON@VGS=4.5V(-4.5V) typ. 130mΩ
P-CH
-100V
-1.7A
216mΩ
227mΩ
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTBA5C10V8
Outline
DFN3×3
GGate SSource DDrain
Pin 1
Ordering Information
Device
MTBA5C10V8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTBA5C10V8
CYStek Product Specification




CYStech

MTBA5C10V8 Datasheet Preview

MTBA5C10V8 Datasheet

N & P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C744V8
Issued Date : 2014.11.03
Revised Date :
Page No. : 2/13
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Drain-Source Breakdown Voltage
BVDSS
100
-100
Gate-Source Voltage
VGS ±20
±20
Continuous Drain Current *2 TA=25 °C, VGS=10V (-10V)
TA=70 °C, VGS=10V (-10V)
IDSM
2.3
1.8
-1.7
-1.4
Continuous Drain Current
TC=25 °C, VGS=10V (-10V)
TC=100 °C, VGS=10V (-10V)
ID
3.4
2.4
-2.6
-1.8
Pulsed Drain Current * 3
IDM 10
-10
Total Power Dissipation
Single device operation
Single device value at dual operation
TC=25°C
TC=100°C
PDSM
PD * 1
1.5 *2
1.24 *2
3.75
1.88
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+175
Unit
V
A
W
°C
Thermal Data
Parameter
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Max. Thermal Resistance, Junction-to-case
Symbol
Rth,j-a
Rth,j-c
Value
84 *2
101 *2
40
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C, t5s. 216°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation
PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low duty cycles to keep initial
TJ=25°C.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
100
1
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
-
-
-
-
1
10
μA
VDS=100V, VGS=0V
VDS=100V, VGS=0V, Tj=70°C
*RDS(ON)
-
-
126.5
130.0
155
175
mΩ
VGS=10V, ID=2.3A
VGS=5V, ID=2A
*GFS - 7 - S VDS=5V, ID=2.3A
Dynamic
Ciss
Coss
Crss
-
1221
-
- 31 - pF VDS=25V, VGS=0V, f=1MHz
- 22 -
MTBA5C10V8
CYStek Product Specification


Part Number MTBA5C10V8
Description N & P-Channel Enhancement Mode Power MOSFET
Maker CYStech
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