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MTBA5C10V8 - N & P-Channel Enhancement Mode Power MOSFET

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTBA5C10V8 Outline DFN3×3 G：Gate S：Source D：Drain Pin 1 Ordering Information Device MTBA5C10V8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6.

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Datasheet preview – MTBA5C10V8

Datasheet Details

Part number MTBA5C10V8
Manufacturer CYStech
File Size 438.69 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBA5C10V8 Datasheet
Additional preview pages of the MTBA5C10V8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 1/13 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTBA5C10V8 BVDSS N-CH 100V ID@VGS=10V(-10V) 2.3A RDSON@VGS=10V(-10V) typ. 126.5mΩ RDSON@VGS=4.5V(-4.5V) typ. 130mΩ P-CH -100V -1.
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