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CYStech

MTBA5Q10Q8 Datasheet Preview

MTBA5Q10Q8 Datasheet

2N & 2P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C934Q8
Issued Date : 2013.10.01
Revised Date : 2013.10.03
Page No. : 1/12
2N- AND 2P-Channel Logic Level Enhancement Mode MOSFET
MTBA5Q10Q8
N-CH P-CH
BVDSS
100V -100V
ID 2.5A -1.7A
RDSON(MAX.) 185mΩ 300mΩ
Description
The MTBA5Q10Q8 consists of two N-channel and two P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTBA5Q10Q8
Outline
SOP-8
GGate SSource DDrain
Ordering Information
Device
MTBA5Q10Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA5Q10Q8
CYStek Product Specification




CYStech

MTBA5Q10Q8 Datasheet Preview

MTBA5Q10Q8 Datasheet

2N & 2P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C934Q8
Issued Date : 2013.10.01
Revised Date : 2013.10.03
Page No. : 2/12
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current TA=25 °C, VGS=10V (-10V)
(Note 2) TA=70 °C, VGS=10V (-10V)
Pulsed Drain Current (Note 1)
Power Dissipation
TA=25°C
TA=100°C
Symbol
BVDSS
VGS
ID
IDM
PD
Limits
N-channel P-channel
100 -100
±20 ±20
2.5 -1.7
2.1 -1.4
10 -6.8
1.66
0.83
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+175
Unit
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width10s.
Value
36
90 (Note 2)
Unit
°C/W
°C/W
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
100
1.0
-
-
-
-
-
-
- - V VGS=0, ID=250μA
1.4 2.5 V VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0
- 1 μA VDS=80V, VGS=0
- 25 μA VDS=70V, VGS=0, Tj=125°C
151
155
185
190
mΩ
ID=2.5A, VGS=10V
ID=2A, VGS=4.5V
8 - S VDS=5V, ID=2.5A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
-
1237
-
- 38 - pF VDS=20V, VGS=0, f=1MHz
- 27 -
- 13 -
-
-
9
36
-
-
ns VDS=50V, ID=1A, VGS=10V, RG=6Ω
- 9-
- 18 -
- 4.2 - nC VDS=80V, ID=2.5A, VGS=10V
- 3.6 -
Body Diode
*VSD
*IS
*ISM
-
-
-
0.9 1.2 V VGS=0V, IS=2.5A
-
-
2.5
10
A
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTBA5Q10Q8
CYStek Product Specification


Part Number MTBA5Q10Q8
Description 2N & 2P-Channel Enhancement Mode Power MOSFET
Maker CYStech
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