Datasheet4U Logo Datasheet4U.com

MTBA6C12Q8 - N & P-Channel Enhancement Mode Power MOSFET

Description

design, low on-resistance and cost-effectiveness.

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTBA6C12Q8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTBA6C12Q8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500.

📥 Download Datasheet

Datasheet preview – MTBA6C12Q8

Datasheet Details

Part number MTBA6C12Q8
Manufacturer CYStech
File Size 401.59 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBA6C12Q8 Datasheet
Additional preview pages of the MTBA6C12Q8 datasheet.

📁 Similar Datasheet

  • MTBA6C12H8 - N- and P-channel enhancement mode power MOSFET (Cystech Electonics)
  • MTBA6C15H8 - P- & N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTBA0N10KJ3 - N-Channel Enhancement Mode MOSFET (Cystech Electonics)
  • MTB - METALLIZED POLYESTER FILM CAPACITORS (RUBYCON CORPORATION)
  • MTB-F000329MNHNAA-B - LCD Module (Microtips)
  • MTB-F000368MNHNAA - LCD Module (Microtips)
  • MTB001 - High Output Interface Driver ICs (Shindengen Electric)
  • MTB001D01-1 - LCD Module (CSOT)
  • MTB010N06I3 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTB011 - High Output Interface Driver ICs (Shindengen Electric)
Other Datasheets by CYStech
  • MTBA6C12J4 - N & P-Channel Enhancement Mode Power MOSFET
  • MTBA6C15J4 - N & P-Channel Enhancement Mode Power MOSFET
  • MTBA6C15Q8 - N & P-Channel Enhancement Mode Power MOSFET
  • MTBA0N10Q8 - N-Channel Enhancement Mode Power MOSFET
  • MTBA5A10Q8 - Dual N-Channel Enhancement Mode Power MOSFET
  • MTBA5C10AQ8 - N & P-Channel Enhancement Mode Power MOSFET
  • MTBA5C10H8 - N & P-Channel Enhancement Mode Power MOSFET
  • MTBA5C10Q8 - N & P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
CYStech Electronics Corp. Spec. No. : C973Q8 Issued Date : 2014.09.23 Revised Date : Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTBA6C12Q8 N-CH P-CH BVDSS 120V -120V ID @ VGS=10V(-10V) 2A -1.7A RDSON(typ.) @VGS=(-)10V 178 mΩ 246 mΩ RDSON(typ.) @VGS=(-)4.5V 185 mΩ 276 mΩ Description The MTBA6C12Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Published: |