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MTBA6C12Q8 Datasheet Preview

MTBA6C12Q8 Datasheet

N & P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C973Q8
Issued Date : 2014.09.23
Revised Date :
Page No. : 1/12
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTBA6C12Q8
N-CH P-CH
BVDSS
120V -120V
ID @ VGS=10V(-10V)
2A -1.7A
RDSON(typ.) @VGS=(-)10V 178 mΩ 246 mΩ
RDSON(typ.) @VGS=(-)4.5V 185 mΩ 276 mΩ
Description
The MTBA6C12Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTBA6C12Q8
Outline
SOP-8
GGate SSource DDrain
Ordering Information
Device
MTBA6C12Q8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA6C12Q8
CYStek Product Specification




CYStech

MTBA6C12Q8 Datasheet Preview

MTBA6C12Q8 Datasheet

N & P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C973Q8
Issued Date : 2014.09.23
Revised Date :
Page No. : 2/12
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current TC=25 °C, VGS=10V (-10V)
TC=100 °C, VGS=10V (-10V)
Continuous Drain Current TA=25 °C, VGS=10V (-10V)
(Note 2)
TA=70 °C, VGS=10V (-10V)
Pulsed Drain Current (Note 1)
Power Dissipation for Dual Operation @TC=25°C
Power Dissipation for Dual Operation @TA=25°C
Power Dissipation for Single Operation @TA=25°C
Operating Junction and Storage Temperature Range
Symbol
BVDSS
VGS
ID
IDSM
IDM
PD
PDSM
Tj; Tstg
Limits
N-channel P-channel
120 -120
±20 ±20
3.5 -3.0
2.5 -2.1
2.0 -1.7
1.7 -1.4
10 -8
6
3
1.9 (Note 2)
1.1 (Note 3)
-55~+175
Unit
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width10s, single operation.
3.Surface mounted on minimum copper pad, pulse width10s, single operation.
Value
25
50
78 (Note 2)
135 (Note 3)
Unit
°C/W
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
BVDSS/Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
120
-
1.3
-
-
-
-
-
-
- - V VGS=0V, ID=250μA
0.1 - V/°C Reference to 25°C, ID=250μA
- 2.3 V VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0V
- 1 μA VDS=96V, VGS=0V
- 10 μA VDS=96V, VGS=0, Tj=55°C
178
185
230
250
mΩ
ID=2A, VGS=10V
ID=1.5A, VGS=4.5V
6.3 - S VDS=10V, ID=2A
Dynamic
Ciss
Coss
Crss
- 298 -
- 29 - pF VDS=25V, VGS=0, f=1MHz
- 14 -
MTBA6C12Q8
CYStek Product Specification


Part Number MTBA6C12Q8
Description N & P-Channel Enhancement Mode Power MOSFET
Maker CYStech
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