Datasheet4U Logo Datasheet4U.com

MTBA6C15Q8 - N & P-Channel Enhancement Mode Power MOSFET

Features

  • Simple drive requirement RDSON(typ. ) @VGS=(-)10V RDSON(typ. ) @VGS=(-)4.5V 169 mΩ 176 mΩ.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package P-CH -150V -1.5A -1.3A -2.6A -1.8A 259 mΩ 277 mΩ Equivalent Circuit MTBA6C15Q8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTBA6C15Q8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment fri.

📥 Download Datasheet

Datasheet preview – MTBA6C15Q8

Datasheet Details

Part number MTBA6C15Q8
Manufacturer CYStech
File Size 400.53 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBA6C15Q8 Datasheet
Additional preview pages of the MTBA6C15Q8 datasheet.

📁 Similar Datasheet

  • MTBA6C15H8 - P- & N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTBA6C12H8 - N- and P-channel enhancement mode power MOSFET (Cystech Electonics)
  • MTBA0N10KJ3 - N-Channel Enhancement Mode MOSFET (Cystech Electonics)
  • MTB - METALLIZED POLYESTER FILM CAPACITORS (RUBYCON CORPORATION)
  • MTB-F000329MNHNAA-B - LCD Module (Microtips)
  • MTB-F000368MNHNAA - LCD Module (Microtips)
  • MTB001 - High Output Interface Driver ICs (Shindengen Electric)
  • MTB001D01-1 - LCD Module (CSOT)
  • MTB010N06I3 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTB011 - High Output Interface Driver ICs (Shindengen Electric)
Other Datasheets by CYStech
  • MTBA6C15J4 - N & P-Channel Enhancement Mode Power MOSFET
  • MTBA6C12J4 - N & P-Channel Enhancement Mode Power MOSFET
  • MTBA6C12Q8 - N & P-Channel Enhancement Mode Power MOSFET
  • MTBA0N10Q8 - N-Channel Enhancement Mode Power MOSFET
  • MTBA5A10Q8 - Dual N-Channel Enhancement Mode Power MOSFET
  • MTBA5C10AQ8 - N & P-Channel Enhancement Mode Power MOSFET
  • MTBA5C10H8 - N & P-Channel Enhancement Mode Power MOSFET
  • MTBA5C10Q8 - N & P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
CYStech Electronics Corp. Spec. No. : C938Q8 Issued Date : 2014.12.01 Revised Date : Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTBA6C15Q8 BVDSS N-CH 150V ID @ TA=25°C, VGS=10V(-10V) 1.8A ID @ TA=70°C, VGS=10V(-10V) 1.5A ID @ TC=25°C, VGS=10V(-10V) 3.2A ID @ TC=100°C, VGS=10V(-10V) 2.3A Features • Simple drive requirement RDSON(typ.) @VGS=(-)10V RDSON(typ.) @VGS=(-)4.5V 169 mΩ 176 mΩ • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package P-CH -150V -1.5A -1.3A -2.6A -1.
Published: |