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MTBB0P10L3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating & Halogen-free package -100V -2.6A 187mΩ (typ) 185mΩ (typ) Equivalent Circuit MTBB0P10L3 Outline SOT-223 D G：Gate D：Drain S：Source S D G Ordering Information Device MTBB0P10L3-0-T3-G Package Shipping SOT-223 (Pb-free lead plating & Halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2.

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Datasheet Details

Part number MTBB0P10L3
Manufacturer CYStech
File Size 645.13 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBB0P10L3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C732L3 Issued Date : 2013.01.15 Revised Date : 2018.11.27 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTBB0P10L3 BVDSS ID @ TA=25°C, VGS=-10V RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.5V, ID=-1A Features  Low Gate Charge  Simple Drive Requirement  Pb-free lead plating & Halogen-free package -100V -2.