900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CYStech

MTBB0P10L3 Datasheet Preview

MTBB0P10L3 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C732L3
Issued Date : 2013.01.15
Revised Date : 2018.11.27
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTBB0P10L3
BVDSS
ID @ TA=25°C, VGS=-10V
RDSON@VGS=-10V, ID=-2A
RDSON@VGS=-4.5V, ID=-1A
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating & Halogen-free package
-100V
-2.6A
187mΩ (typ)
185mΩ (typ)
Equivalent Circuit
MTBB0P10L3
Outline
SOT-223
D
GGate DDrain
SSource
S
D
G
Ordering Information
Device
MTBB0P10L3-0-T3-G
Package
Shipping
SOT-223
(Pb-free lead plating & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13reel
Product rank, zero for no rank products
Product name
MTBB0P10L3
CYStek Product Specification




CYStech

MTBB0P10L3 Datasheet Preview

MTBB0P10L3 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=-10V, TA=25C
Continuous Drain Current @ VGS=-10V, TA=70C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=6mH, ID=-2A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TA=25
Total Power Dissipation @TA=70
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Spec. No. : C732L3
Issued Date : 2013.01.15
Revised Date : 2018.11.27
Page No. : 2/9
Limits
-100
±20
-2.6
-2.1
-10.4
-2
12
0.5
2.5
1.6
-55~+150
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-c
Rth,j-a
15
50 (Note)
C/W
Note : Surface mounted on a 1 in2 pad of 2 oz. copper, t10s; 120°C/W when mounted on minimum copper pad.
Characteristics (Tc=25C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
-100 -
-1 -
-
-3
V
VGS=0V, ID=-250μA
VDS =VGS, ID=-250μA
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
- - -1 μA VDS =-80V, VGS =0V
- - -25
VDS =-70V, VGS =0V, TJ=125C
RDS(ON) *1
-
-
187
185
225
245
mΩ
VGS =-10V, ID=-2A
VGS =-4.5V, ID=-1A
GFS *1
-
6
- S VDS =-5V, ID=-2A
Dynamic
Qg *1, 2
- 25.8 -
Qgs *1, 2
- 3.4 - nC ID=-2A, VDS=-80V, VGS=-10V
Qgd *1, 2
- 3.8 -
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
- 6.6 -
- 18.8 -
- 128.2 -
ns
VDS=-50V, ID=-2A, VGS=-10V,
RG=1Ω
tf *1, 2
- 46.6 -
Ciss - 1413 -
Coss
- 50 - pF VGS=0V, VDS=-25V, f=1MHz
Crss - 41 -
MTBB0P10L3
CYStek Product Specification


Part Number MTBB0P10L3
Description P-Channel Enhancement Mode Power MOSFET
Maker CYStech
PDF Download

MTBB0P10L3 Datasheet PDF






Similar Datasheet

1 MTBB0P10L3 P-Channel Enhancement Mode Power MOSFET
CYStech





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy