MTE130N20KE3 - N-Channel Enhancement Mode Power MOSFET

Features

Low Gate Charge.
Simple Drive Requirement.
ESD Diode Protected Gate.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID RDSON(TYP) @ VGS=10V, ID=9A 200V 18A 143mΩ Symbol MTE130N20KE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE130N20KE3-0-UB-S Package TO-220 (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G fo.

CYStech

Datasheet Details

Part number	MTE130N20KE3
Manufacturer	CYStech
File Size	307.98 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE130N20KE3 Datasheet
Additional preview pages of the MTE130N20KE3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20KE3 Spec. No. : C952E3 Issued Date : 2013.12.27 Revised Date : 2014.03.05 Page No.

Published: Apr 27, 2016 |