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MTE130N20KJ3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • ESD Diode Protected Gate.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package BVDSS ID RDSON(TYP) @ VGS=10V, ID=9A 200V 18A 142mΩ Symbol MTE130N20KJ3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTE130N20KJ3-0-T3-G Package Shipping TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade :.

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Datasheet Details

Part number MTE130N20KJ3
Manufacturer CYStech
File Size 345.01 KB
Description N-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20KJ3 Spec. No. : C952J3 Issued Date : 2014.02.27 Revised Date : 2014.03.05 Page No.
Published: |