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MTEH0N25J3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTEH0N25J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package MTEH0N25J3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel.

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Datasheet Details

Part number MTEH0N25J3
Manufacturer CYStech
File Size 342.87 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTEH0N25J3 Datasheet
Additional preview pages of the MTEH0N25J3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2014.04.23 Revised Date : 2014.04.28 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEH0N25J3 BVDSS ID@VGS=10V RDSON(TYP) VGS=10V, ID=3A VGS=6V, ID=2A 250V 3.
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