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MTN4N60BJ3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating package 600V 4.0A 1.7Ω.

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Datasheet Details

Part number MTN4N60BJ3
Manufacturer CYStech
File Size 474.92 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN4N60BJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C128J3 Issued Date : 2015.05.28 Revised Date : 2015.05.29 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTN4N60BJ3 BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=2A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating package 600V 4.0A 1.
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