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MTN4N60BE3 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The MTN4N60BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package.

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Datasheet preview – MTN4N60BE3

Datasheet Details

Part number MTN4N60BE3
Manufacturer CYStech
File Size 476.19 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN4N60BE3 Datasheet
Additional preview pages of the MTN4N60BE3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C128E3 Issued Date : 2016.03.21 Revised Date : 2017.04.05 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN4N60BE3 BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=2.4A 600V 4.0A 1.8Ω Description The MTN4N60BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
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