Datasheet4U Logo Datasheet4U.com

MTN4N60CJ3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package 600V 4.0A 1.8Ω.

📥 Download Datasheet

Datasheet Details

Part number MTN4N60CJ3
Manufacturer CYStech
File Size 490.78 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN4N60CJ3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTN4N60E3 N-Channel Enhancement Mode Power MOSFET CYStech Electronics
MTN4N65BFP N-Channel Enhancement Mode Power MOSFET Cystech Electonics
MTN4N65CE3 N-Channel Enhancement Mode Power MOSFET CYStech Electronics
MTN4N65CFP N-Channel Enhancement Mode Power MOSFET Cystech Electonics
MTN4N65CI3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

Other Datasheets by CYStech

Part Number Description
MTN4N60CFP N-Channel Enhancement Mode Power MOSFET
MTN4N60CI3 N-Channel Enhancement Mode Power MOSFET
MTN4N60BE3 N-Channel Enhancement Mode Power MOSFET
MTN4N60BFP N-Channel Enhancement Mode Power MOSFET
MTN4N60BI3 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C081J3 Issued Date : 2016.02.25 Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTN4N60CJ3 BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=2A Features • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package 600V 4.0A 1.