MTN4N60BJ3 Description
CYStech Electronics Corp. 2015.05.28 Revised Date : 1/11 N-Channel Enhancement Mode Power MOSFET MTN4N60BJ3 BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=2A.
MTN4N60BJ3 Key Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- Pb-free lead plating package