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CYStech Electronics

MTB015N10RI3 Datasheet Preview

MTB015N10RI3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C053I3
Issued Date : 2016.10.13
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB015N10RI3 BVDSS
ID@ VGS=10V, TC=25°C
100V
46A
RDS(ON)@VGS=10V, ID=20A 13.5mΩ(typ)
RDS(ON)@VGS=4.5V, ID=20A 16.0mΩ(typ)
Features
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
RoHS compliant package & Halogen-free package
Symbol
MTB015N10RI3
Outline
TO-251S
GGate
DDrain
SSource
GDS
Ordering Information
Device
MTB015N10RI3-0-UA-G
Package
TO-251S
(RoHS compliant and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA : 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTB015N10RI3
CYStek Product Specification




CYStech Electronics

MTB015N10RI3 Datasheet Preview

MTB015N10RI3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C053I3
Issued Date : 2016.10.13
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=0.1mH, ID=46A, RG=25Ω (Note 3)
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
Total Power Dissipation @ TC=25
Total Power Dissipation @ TC=100
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle 1%.
3. 100% tested by conditions of L=0.1mH, VGS=10V, IAS=24A, VDD=25V
Limits
100
±20
46
29
184
46
106
6
62.5
25
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2
110
Unit
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
100 -
1-
-
3
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
-
-
±100
nA VGS=±20V, VDS=0V
-
-
-
-
1
25
μA
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=125°C
-
-
13.5
16.0
16.6
22.5
mΩ
VGS =10V, ID=20A
VGS =4.5V, ID=20A
- 32.2
-
S VDS =10V, ID=20A
- 54.4
-
- 7.7
- nC VDS=80V, ID=20A, VGS=10V
- 10.7
-
- 16.6
-
- 18
- 59.6
-
-
ns
VDS=50V, ID=20A, VGS=10V,
RGS=1Ω
- 6.6
-
MTB015N10RI3
CYStek Product Specification


Part Number MTB015N10RI3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech Electronics
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