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MTB04N03AQ8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Dynamic dv/dt rating.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and halogen-free package Symbol MTB04N03AQ8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source Ordering Information Device MTB04N03AQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G.

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Datasheet Details

Part number MTB04N03AQ8
Manufacturer CYStech Electronics
File Size 270.37 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB04N03AQ8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB04N03AQ8 BVDSS ID @VGS=10V RDSON@VGS=10V, ID=18A RDSON@VGS=4.5V, ID=12A 30V 20A 4.4mΩ(typ) 5.