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CYStech Electronics

MTB04N03AQ8 Datasheet Preview

MTB04N03AQ8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C889Q8
Issued Date : 2013.12.02
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB04N03AQ8 BVDSS
ID @VGS=10V
RDSON@VGS=10V, ID=18A
RDSON@VGS=4.5V, ID=12A
30V
20A
4.4mΩ(typ)
5.8mΩ(typ)
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free lead plating and halogen-free package
Symbol
MTB04N03AQ8
Outline
Pin 1
SOP-8
GGate DDrain SSource
Ordering Information
Device
MTB04N03AQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB04N03AQ8
CYStek Product Specification




CYStech Electronics

MTB04N03AQ8 Datasheet Preview

MTB04N03AQ8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C889Q8
Issued Date : 2013.12.02
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=2mH, ID=20A, VDD=25V
TC=25
Total Power Dissipation
TC=100
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
Limits
30
±20
20
12.6
14
11
100 *1
20
400 *2
5
2
2.5 *3
1.6 *3
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
30
1.0
-
-
-
-
-
-
-
-
-
-
2.0
37
-
-
-
4.4
5.8
2394
494
281
-
2.5
-
±100
1
25
6
8
-
-
-
V VGS=0, ID=250μA
V VDS = VGS, ID=250μA
S VDS =5V, ID=18A
nA VGS=±20
μA
VDS =30V, VGS =0
VDS =30V, VGS =0, Tj=125°C
mΩ VGS =10V, ID=18A
mΩ VGS =4.5V, ID=12A
pF VGS=0V, VDS=15V, f=1MHz
MTB04N03AQ8
CYStek Product Specification


Part Number MTB04N03AQ8
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech Electronics
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