MTB04N03E3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics

MTB04N03E3 Description

CYStech Electronics Corp.Spec.No.: C889E3 Issued Date : 2013.02.20 Revised Date : 2013.02.26 Page No.: 1/7 N-Channel Enhancement Mode Power MOSF.

MTB04N03E3 Features

* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package RDSON(TYP) VGS=10V, ID=30A VGS=4.5V, ID=24A 30V 115A 3.8mΩ 6.1mΩ Symbol MTB04N03E3 Outline TO-220 G：Gate D：Drain S：Source

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Datasheet Details

Part number: MTB04N03E3
Manufacturer: CYStech Electronics
File Size: 259.13 KB
Datasheet: MTB04N03E3-CYStechElectronics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET CYStech Electronics

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