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CYStech Electronics

MTB04N03E3 Datasheet Preview

MTB04N03E3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C889E3
Issued Date : 2013.02.20
Revised Date : 2013.02.26
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTB04N03E3
BVDSS
ID
Features
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
Pb-free lead plating and RoHS compliant package
RDSON(TYP)
VGS=10V, ID=30A
VGS=4.5V, ID=24A
30V
115A
3.8mΩ
6.1mΩ
Symbol
MTB04N03E3
Outline
TO-220
GGate
DDrain
SSource
GDS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy
L=2mH, ID=26A, VDD=25V
Repetitive Avalanche Energy L=0.05mH
Total Power Dissipation
TC=25°C
TC=100°C
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature.
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
MTB04N03E3
Limits
30
±20
115
81
460 *1
26
576
25
107
53
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification




CYStech Electronics

MTB04N03E3 Datasheet Preview

MTB04N03E3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C889E3
Issued Date : 2013.02.20
Revised Date : 2013.02.26
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
1.4
62.5
Unit
°C/W
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
30 -
1 2.2
-
3
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
IGSS
-
-
±100
nA VGS=±20, VDS=0V
IDSS
-
-
-
-
1
25
μA
VDS =30V, VGS =0V
VDS =30V, VGS =0V, Tj=125°C
*RDS(ON)
-
-
3.8
6.1
5
8
mΩ
VGS =10V, ID=30A
VGS =4.5V, ID=24A
*GFS
- 39 - S VDS =5V, ID=20A
Dynamic
*Qg(VGS=10V) - 50 -
*Qg(VGS=5V)
*Qgs
-
-
31
10
-
-
nC VDS=15V, ID=30A,VGS=10V
*Qgd
- 18 -
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
- 12 -
- 10 -
- 43 -
- 13 -
- 2466 -
- 432 -
- 298 -
ns
VDS=15V, ID=25A, VGS=10V,
RGS=2.7Ω
pF VGS=0V, VDS=25V, f=1MHz
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
*trr -
*Qrr -
-
-
115
460
A
0.96 1.2
V IF=75A, VGS=0V
35
28
-
-
ns
nC
IF=30A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
Package
Shipping
MTB04N03E3-0-UB-S
TO-220
(Pb-free lead plating and RoHS compliant package)
50 pcs/tube, 20 tubes/box,
4 boxes / carton
MTB04N03E3
CYStek Product Specification


Part Number MTB04N03E3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech Electronics
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