MTB04N03E3
MTB04N03E3 is N-Channel Enhancement Mode Power MOSFET manufactured by CYStech Electronics.
Features
- Simple Drive Requirement
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- Pb-free lead plating and Ro HS pliant package
RDSON(TYP)
VGS=10V, ID=30A VGS=4.5V, ID=24A
30V 115A 3.8mΩ 6.1mΩ
Symbol
Outline
TO-220
G:Gate D:Drain S:Source
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy
L=2m H, ID=26A, VDD=25V
Repetitive Avalanche Energy L=0.05m H
Total Power Dissipation
TC=25°C TC=100°C
Operating Junction and Storage Temperature
Note :
- 1. Pulse width limited by maximum junction temperature.
Symbol
VDS VGS ID ID IDM IAS EAS EAR
Tj,...