• Part: MTB04N03E3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: CYStech Electronics
  • Size: 259.13 KB
Download MTB04N03E3 Datasheet PDF
CYStech Electronics
MTB04N03E3
MTB04N03E3 is N-Channel Enhancement Mode Power MOSFET manufactured by CYStech Electronics.
Features - Simple Drive Requirement - Repetitive Avalanche Rated - Fast Switching Characteristic - Pb-free lead plating and Ro HS pliant package RDSON(TYP) VGS=10V, ID=30A VGS=4.5V, ID=24A 30V 115A 3.8mΩ 6.1mΩ Symbol Outline TO-220 G:Gate D:Drain S:Source Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy L=2m H, ID=26A, VDD=25V Repetitive Avalanche Energy L=0.05m H Total Power Dissipation TC=25°C TC=100°C Operating Junction and Storage Temperature Note : - 1. Pulse width limited by maximum junction temperature. Symbol VDS VGS ID ID IDM IAS EAS EAR Tj,...