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MTB04N03F3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On-resistance.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package 30V 115A 3.4mΩ 4.3mΩ Symbol MTB04N03F3 Outline TO-263 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB04N03F3-0-T7-X TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gree.

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Datasheet Details

Part number MTB04N03F3
Manufacturer CYStech Electronics
File Size 357.47 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB04N03F3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C807F3 Issued Date : 2009.12.02 Revised Date : 2015.09.04 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB04N03F3 BVDSS ID@VGS=10V, TC=25°C RDSON(TYP) VGS=10V, ID=30A VGS=4.5V, ID=24A Features • Low On-resistance • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package 30V 115A 3.4mΩ 4.