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CYStech Electronics

MTB04N03F3 Datasheet Preview

MTB04N03F3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C807F3
Issued Date : 2009.12.02
Revised Date : 2015.09.04
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB04N03F3 BVDSS
ID@VGS=10V, TC=25°C
RDSON(TYP)
VGS=10V, ID=30A
VGS=4.5V, ID=24A
Features
Low On-resistance
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
RoHS compliant package
30V
115A
3.4mΩ
4.3mΩ
Symbol
MTB04N03F3
Outline
TO-263
GGate
DDrain
SSource
G DS
Ordering Information
Device
Package
Shipping
MTB04N03F3-0-T7-X
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB04N03F3
CYStek Product Specification




CYStech Electronics

MTB04N03F3 Datasheet Preview

MTB04N03F3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @VGS=10V, TC=25°C (silicon limit)
Continuous Drain Current @VGS=10V, TC=100°C(silicon limit)
Continuous Drain Current @VGS=10V, TC=25°C (package limit)
ID
Continuous Drain Current @VGS=10V, TC=100°C (package limit)
Pulsed Drain Current
IDM
Avalanche Current
IAS
Avalanche Energy
L=2mH, ID=26A, VDD=25V
EAS
Repetitive Avalanche Energy L=0.05mH
EAR
Total Power Dissipation
TC=25°C
TC=100°C
PD
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature.
*2. 100% UIS testing in condition of VD=25V, L=1mH, VG=10V, IL=20A, Rated VDS=30V
Spec. No. : C807F3
Issued Date : 2009.12.02
Revised Date : 2015.09.04
Page No. : 2/9
Limits
30
±20
115
81
60
60
460 *1
26
576
25
107
53
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
1.4
62.5
Unit
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
*GFS
IGSS
IDSS
IDSS
*RDS(ON)
*RDS(ON)
Dynamic
*Qg(VGS=10V)
*Qg(VGS=5V)
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
38 -
S VDS =5V, ID=20A
-
±100
nA VGS=±20V
-
-
1
25
μA
VDS =30V, VGS =0V
VDS =30V, VGS =0V, Tj=125°C
3.4
4.3
5.0
7.5
mΩ
VGS =10V, ID=30A
VGS =4.5V, ID=24A
60 -
35 -
10 -
17 -
16.8 -
20.8 -
71.2 -
21.4 -
nC VDS=15V, ID=30A,VGS=10V
ns
VDS=15V, ID=25A, VGS=10V,
RGS=2.7Ω
MTB04N03F3
CYStek Product Specification


Part Number MTB04N03F3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech Electronics
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