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CYStech Electronics

MTB04N03H8 Datasheet Preview

MTB04N03H8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C789H8
Issued Date : 2010.09.23
Revised Date : 2012.11.12
Page No. : 1/11
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB04N03H8 BVDSS
ID
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=25A
30V
75A
3.2 mΩ(typ)
4.9 mΩ(typ)
Description
The MTB04N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free lead plating and Halogen-free package
Symbol
MTB04N03H8
Outline
Pin 1
DFN5×6
GGate
DDrain
SSource
MTB04N03H8
CYStek Product Specification




CYStech Electronics

MTB04N03H8 Datasheet Preview

MTB04N03H8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C789H8
Issued Date : 2010.09.23
Revised Date : 2012.11.12
Page No. : 2/11
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TC=25
TC=100
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
30
±20
75
47
160 *1
53
140
40 *2
50
20
-55~+150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=30V N-CH
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
2.5 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
30
1.0
-
-
-
-
-
-
-
-
-
-
1.7
25
-
-
-
3.2
4.9
3925
438
385
-
3.0
-
±100
1
25
4
6.6
-
-
-
V VGS=0, ID=250μA
V VDS = VGS, ID=250μA
S VDS =5V, ID=24A
nA VGS=±20
μA
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
mΩ VGS =10V, ID=30A
mΩ VGS =4.5V, ID=24A
pF VGS=0V, VDS=15V, f=1MHz
MTB04N03H8
CYStek Product Specification


Part Number MTB04N03H8
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech Electronics
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