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MTB04N03H8 - N-Channel Enhancement Mode Power MOSFET

General Description

The MTB04N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Dynamic dv/dt rating.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and Halogen-free package Symbol MTB04N03H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source MTB04N03H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C789H8 Issued Date : 2010.09.23 Revised Date : 2012.11.12 Page No. : 2/11 Absolute Maximum Ratings (Ta=25°C) Parameter Sym.

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Datasheet Details

Part number MTB04N03H8
Manufacturer CYStech Electronics
File Size 268.15 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB04N03H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C789H8 Issued Date : 2010.09.23 Revised Date : 2012.11.12 Page No. : 1/11 N-Channel Logic Level Enhancement Mode Power MOSFET MTB04N03H8 BVDSS ID RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.5V, ID=25A 30V 75A 3.2 mΩ(typ) 4.9 mΩ(typ) Description The MTB04N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol MTB04N03H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source MTB04N03H8 CYStek Product Specification CYStech Electronics Corp.