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CYStech Electronics

MTB090N06I3 Datasheet Preview

MTB090N06I3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C420I3
Issued Date : 2014.07.11
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB090N06I3 BVDSS
ID@VGS=10V
RDSON(TYP)
VGS=10V, ID=3A
VGS=4.5V, ID=2A
60V
5A
70mΩ
82mΩ
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
Symbol
MTB090N06I3
Outline
TO-251
GGate DDrain SSource
G DS
Ordering Information
Device
MTB090N06I3-0-UJ-G
Package
Shipping
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 100 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec,UJ : 80 pcs / tube, 100 tubes/box
Product rank, zero for no rank products
Product name
MTB090N06I3
CYStek Product Specification




CYStech Electronics

MTB090N06I3 Datasheet Preview

MTB090N06I3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25C
Continuous Drain Current @ VGS=10V, TC=100C
Continuous Drain Current @ VGS=10V, TA=25C
Continuous Drain Current @ VGS=10V, TA=70C
Pulsed Drain Current
Total Power Dissipation @TC=25
(Note 1)
Total Power Dissipation @TC=100(Note 1)
Total Power Dissipation @TA=25
(Note 2)
Total Power Dissipation @TA=70
(Note 2)
Operating Junction and Storage Temperature Range
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 3)
Symbol
VDS
VGS
ID
IDM
PD
PDSM
Tj, Tstg
Spec. No. : C420I3
Issued Date : 2014.07.11
Revised Date :
Page No. : 2/8
Limits
60
±20
15
11
5
4
30
25
12.5
2.5
1.6
-55~+175
Unit
V
A
W
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
6 C/W
Thermal Resistance, Junction-to-ambient, max (Note 2)
RθJA
50 C/W
Thermal Resistance, Junction-to-ambient, max (Note 4)
RθJA
110 C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t10s.
5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB090N06I3
CYStek Product Specification


Part Number MTB090N06I3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech Electronics
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