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MTB090N06I3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package Symbol MTB090N06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device MTB090N06I3-0-UJ-G Package Shipping TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 100 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packi.

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Datasheet Details

Part number MTB090N06I3
Manufacturer CYStech Electronics
File Size 262.47 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB090N06I3 Datasheet
Additional preview pages of the MTB090N06I3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C420I3 Issued Date : 2014.07.11 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB090N06I3 BVDSS ID@VGS=10V RDSON(TYP) VGS=10V, ID=3A VGS=4.
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