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CYStech Electronics

MTB090N06J3 Datasheet Preview

MTB090N06J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C420J3
Issued Date : 2016.09.07
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTB090N06J3 BVDSS
ID@ TC=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=3A
RDS(ON)@VGS=4V, ID=2.5A
60V
10A
74mΩ(typ)
91mΩ(typ)
Features
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
RoHS compliant package
Symbol
MTB090N06J3
Outline
TO-252(DPAK)
GGate
DDrain
SSource
G DS
Ordering Information
Device
MTB090N06J3-0-T3-G
Package
Shipping
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB090N06J3
CYStek Product Specification




CYStech Electronics

MTB090N06J3 Datasheet Preview

MTB090N06J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C420J3
Issued Date : 2016.09.07
Revised Date :
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current
(Note 1)
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=7A, VDD=25V (Note 2)
Repetitive Avalanche Energy@ L=0.05mH
(Note 3)
Total Power Dissipation @ TC=25
Total Power Dissipation @ TC=100
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Note : 1. Pulse width limited by maximum junction temperature.
2. 100% tested by conditions of L=0.1mH, IAS=3A, VGS=10V, VDD=25V.
3. Duty cycle 1%.
Limits
60
±20
10
6.3
20
10
24.5
2
21
8.4
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Symbol
Rth,j-c
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
Note : 1.When mounted on PCB of 1 in² pad area, t10s.
2. When mounted on the minimum pad size recommended (PCB mount), t10s.
Value
6
50 (Note 1)
110 (Note 2)
Unit
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
60
1
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
-
-
±100
nA VGS=±20V, VDS=0V
-
-
-
-
1
25
μA
VDS =60V, VGS =0V
VDS =48V, VGS =0V, Tj=125°C
-
-
74
91
90
130
mΩ
VGS =10V, ID=3A
VGS =4V, ID=2.5A
- 3.9 - S VDS =10V, ID=3A
- 8.6
-
- 1.6
- nC VDS=48V, ID=3A, VGS=10V
- 1.8
-
- 5.8
-
- 15.4
- 18
-
-
ns VDS=30V, ID=3A, VGS=10V, RGS=3Ω
- 4.4
-
MTB090N06J3
CYStek Product Specification


Part Number MTB090N06J3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech Electronics
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