MTB09N06I3 Description
CYStech Electronics Corp. 2015.05.30 Revised Date.
MTB09N06I3 Key Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- Pb-free lead plating and halogen-free package
MTB09N06I3 is N-Channel Enhancement Mode Power MOSFET manufactured by CYStech Electronics.
| Part Number | Description |
|---|---|
| MTB090N06I3 | N-Channel Enhancement Mode Power MOSFET |
| MTB090N06J3 | N-Channel Enhancement Mode Power MOSFET |
| MTB090N06N3 | N-Channel Enhancement Mode Power MOSFET |
| MTB095N10KRN3 | 100V N-Channel Enhancement Mode MOSFET |
| MTB09P04DFP | P-Channel Enhancement Mode Power MOSFET |
CYStech Electronics Corp. 2015.05.30 Revised Date.