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CYStech Electronics

MTB09N06I3 Datasheet Preview

MTB09N06I3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C912I3
Issued Date : 2015.05.30
Revised Date : 2015.06.01
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTB09N06I3
BVDSS
ID@VGS=10V, TC=25°C
60V
50A
RDS(ON)@VGS=10V, ID=20A 7.6 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=20A 9.3 mΩ(typ)
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
Symbol
MTB09N06I3
Outline
TO-251
GGate DDrain SSource
G DS
Ordering Information
Device
Package
Shipping
MTB09N06I3-0-UA-G
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTB09N06I3
CYStek Product Specification




CYStech Electronics

MTB09N06I3 Datasheet Preview

MTB09N06I3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C912I3
Issued Date : 2015.05.30
Revised Date : 2015.06.01
Page No. : 2/ 8
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V(silicon limit) (Note 1)
Continuous Drain Current @TC=100°C, VGS=10V(silicon limit) (Note 1)
Continuous Drain Current @TC=25°C, VGS=10V(package limit) (Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Notes 2 & 4)
Continuous Drain Current @TA=70°C, VGS=10V
(Notes 2 & 4)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=0.1mH, ID=45A, VDD=25V
(Note 3)
Repetitive Avalanche Energy
(Note 3)
TC=25°C
(Note 1)
Power Dissipation
TC=100°C
TA=25°C
(Note 1)
(Notes 2 & 4)
TA=70°C
(Notes 2 & 4)
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Limits
60
±20
62
44
50
12
9.6
180
45
101
10
75
37.5
1.5
0.96
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 4)
Symbol
RθJC
RθJA
Value
2
83
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in
any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t10s.
MTB09N06I3
CYStek Product Specification


Part Number MTB09N06I3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech Electronics
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