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CYStech Electronics

MTB20C06KQ8 Datasheet Preview

MTB20C06KQ8 Datasheet

N- AND P-Channel Enhancement Mode MOSFET

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CYStech Electronics Corp.
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date : 2020.02.26
Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTB20C06KQ8
BVDSS
ID@VGS=10V(-10V)
RDSON(TYP.)@VGS=10V(-10V)
RDSON(TYP.)@VGS=4.5V(-4.5V)
RDSON(TYP.)@VGS=4V(-4V)
N-CH
60V
6A
18.1mΩ
20.5mΩ
21.7mΩ
P-CH
-60V
-5A
27.9mΩ
41.4mΩ
47.8mΩ
Description
The MTB20C06KQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement
Low on-resistance
Fast switching speed
ESD protected gate
Common drain structure
Pb-free lead plating and halogen-free package
Ordering Information
Device
MTB20C06KQ8-0-T3-G
MTB20C06KQ8-0-TF-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
4000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13reel, TF : 4000 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB20C06KQ8
CYStek Product Specification




CYStech Electronics

MTB20C06KQ8 Datasheet Preview

MTB20C06KQ8 Datasheet

N- AND P-Channel Enhancement Mode MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C105Q8
Issued Date : 2015.07.09
Revised Date : 2020.02.26
Page No. : 2/13
Equivalent Circuit
Outline
MTB20C06KQ8
SOP-8
GGate SSource DDrain
Absolute Maximum Ratings (TA=25C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current TA=25 C, VGS=10V (-10V)
(Note 2) TA=70 C, VGS=10V (-10V)
Pulsed Drain Current (Note 1)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Symbol
BVDSS
VGS
ID
IDM
PD
Tj; Tstg
Limits
N-channel P-channel
60 -60
±20 ±20
6 -5
4.8 -4
30 -20
2
1.6 (Note 2)
0.9 (Note 3)
-55~+150
Unit
V
A
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in²copper pad of FR-4 board, pulse width10s.
3.Surface mounted on minimum copper pad, pulse width10s.
Value
10
78 (Note 2)
135 (Note 3)
Unit
C/W
MTB20C06KQ8
CYStek Product Specification


Part Number MTB20C06KQ8
Description N- AND P-Channel Enhancement Mode MOSFET
Maker CYStech Electronics
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