Description
RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V) 82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V)
The MTC3586DFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2
2-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resist
Features
- Simple drive requirement.
- Low gate charge.
- Low on-resistance.
- Fast switching speed.
- Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC3586DFA6
Outline
DFN2×2-6L
G：Gate S：Source D：Drain
Ordering Information
Device
Package
MTC358.
MTC3586DFA6 Datasheet
