MTC3588N6 - P- & N-Channel Enhancement Mode Power MOSFET
CYStech Electronics
Key Features
Simple drive requirement.
Low gate charge.
Low on-resistance.
Fast switching speed.
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC3588N6
Outline
SOT-26
D2 S1 D1
G：Gate S：Source D：Drain
G2 S2 G1
Ordering Information
Device
Package
MTC3588N6-0-T1-G
SOT-26 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gr.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CYStech Electronics Corp.
Spec. No. : C102N6 Issued Date : 2015.08.13 Revised Date : Page No. : 1/12
N- And P-Channel Enhancement Mode Power MOSFET
MTC3588N6 BVDSS
N-CH 14V
ID @ TA=25 °C 5.4A(VGS=4.5V)
17.6mΩ(VGS=4.5V)
RDSON(TYP.)
24.7mΩ(VGS=2.5V) 39.5mΩ(VGS=1.8V)
67.3mΩ(VGS=1.5V)
P-CH -14V -3.6A(VGS=-4.5 V)
45.1mΩ(VGS=-4.5V)
65.6mΩ(VGS=-2.5V)
88.5mΩ(VGS=-1.8V)
154.3mΩ(VGS=-1.
MTC3588N6 Datasheet
