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MTC3587DL8 - P- & N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low gate charge.
  • Low on-resistance RDSON(TYP. ).
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package N-CH 20V 4.9A(VGS=4.5V) 32mΩ(VGS=4.5V) 43mΩ(VGS=2.5V) 62mΩ(VGS=1.8V) P-CH -20V -3.9A(VGS=-4.5 V) 50mΩ(VGS=-4.5V) 62mΩ(VGS=-2.5V) 81mΩ(VGS=-1.8V) Equivalent Circuit MTC3587DL8 Outline DFNWB3×2-8L-B G：Gate S：Source D：Drain Ordering Information Device MTC3587DL8-0-T1-G Package DFNWB3×2-8L-B (Pb-free le.

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Datasheet Details

Part number MTC3587DL8
Manufacturer CYStech Electronics
File Size 441.79 KB
Description P- & N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTC3587DL8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C093L8 Issued Date : 2016.09.30 Revised Date : Page No. : 1/13 N- and P-Channel Enhancement Mode Power MOSFET MTC3587DL8 BVDSS ID @ TA=25°C Features • Simple drive requirement • Low gate charge • Low on-resistance RDSON(TYP.) • Fast switching speed • Pb-free lead plating and halogen-free package N-CH 20V 4.9A(VGS=4.5V) 32mΩ(VGS=4.5V) 43mΩ(VGS=2.5V) 62mΩ(VGS=1.8V) P-CH -20V -3.9A(VGS=-4.5 V) 50mΩ(VGS=-4.5V) 62mΩ(VGS=-2.5V) 81mΩ(VGS=-1.