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MTC3588BDFA6 - P- & N-Channel Enhancement Mode Power MOSFET

General Description

The MTC3588BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2

device design, low on-resistance and cost-effectiveness.

2-6L package is universally pre

Key Features

  • Simple drive requirement.
  • Pb-free lead plating and halogen-free package.
  • Low on-resistance.
  • Fast switching speed.
  • Low gate charge Equivalent Circuit MTC3588BDFA6 Outline DFN2×2-6L G：Gate S：Source D：Drain.

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Datasheet Details

Part number MTC3588BDFA6
Manufacturer CYStech Electronics
File Size 458.93 KB
Description P- & N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTC3588BDFA6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C102DFA6 Issued Date : 2015.12.03 Revised Date : Page No. : 1/13 N- And P-Channel Enhancement Mode MOSFET MTC3588BDFA6 N-CH BVDSS 14V P-CH -14V ID 6A(VGS=4.5V) -4A(VGS=-4.5 V) 16.6mΩ(VGS=4.5V) 43mΩ(VGS=-4.5V) RDSON(TYP.) 23.7mΩ(VGS=2.5V) 38.5mΩ(VGS=1.8V) 63.6mΩ(VGS=-2.5V) 86.5mΩ(VGS=-1.8V) 66.3mΩ(VGS=1.5V) 153.3mΩ(VGS=-1.5V) Description The MTC3588BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2*2-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN2*2-6L package is universally preferred for all commercial-industrial surface mount applications.