• Part: MTC3588BDFA6
  • Description: P- & N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: CYStech Electronics
  • Size: 458.93 KB
Download MTC3588BDFA6 Datasheet PDF
CYStech Electronics
MTC3588BDFA6
MTC3588BDFA6 is P- & N-Channel Enhancement Mode Power MOSFET manufactured by CYStech Electronics.
CYStech Electronics Corp. Spec. No. : C102DFA6 Issued Date : 2015.12.03 Revised Date : Page No. : 1/13 N- And P-Channel Enhancement Mode MOSFET N-CH BVDSS 14V P-CH -14V 6A(VGS=4.5V) -4A(VGS=-4.5 V) 16.6mΩ(VGS=4.5V) 43mΩ(VGS=-4.5V) RDSON(TYP.) 23.7mΩ(VGS=2.5V) 38.5mΩ(VGS=1.8V) 63.6mΩ(VGS=-2.5V) 86.5mΩ(VGS=-1.8V) 66.3mΩ(VGS=1.5V) 153.3mΩ(VGS=-1.5V) Description The MTC3588BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2- 2-6L package, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN2- 2-6L package is universally preferred for all mercial-industrial surface mount applications. Features - Simple drive requirement - Pb-free lead plating and halogen-free package - Low on-resistance - Fast switching speed - Low gate charge Equivalent Circuit Outline DFN2×2-6L G:Gate S:Source...