MTE030N15RH8 Overview
CYStech Electronics Corp. 2016.09.08 Revised Date : 1/10 N-Channel Enhancement Mode Power MOSFET MTE030N15RH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C.
MTE030N15RH8 Key Features
- Single Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Repetitive Avalanche Rated
- Pb-free lead plating and Halogen-free package