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MTP2301N3 - 20V P-CHANNEL Enhancement Mode MOSFET

Key Features

  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • Excellent thermal and electrical capabilities.
  • Compact and low profile SOT-23 package.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTP2301N3 Outline SOT-23 D G:Gate S:Source D:Drain S G Ordering Information Device MTP2301N3-0-T1-G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Envir.

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Datasheet Details

Part number MTP2301N3
Manufacturer CYStech Electronics
File Size 607.33 KB
Description 20V P-CHANNEL Enhancement Mode MOSFET
Datasheet download datasheet MTP2301N3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 1/9 20V P-Channel Enhancement Mode MOSFET MTP2301N3 BVDSS ID@TA=25°C, VGS=-4.5V RDSON(TYP)@VGS=-4.5V, ID=-2.8A RDSON(TYP)@VGS=-2.5V, ID=-2A -20V -3.