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MTP2301N3 - 20V P-CHANNEL Enhancement Mode MOSFET

Features

  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • Excellent thermal and electrical capabilities.
  • Compact and low profile SOT-23 package.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTP2301N3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device MTP2301N3-0-T1-G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Envir.

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Datasheet Details

Part number MTP2301N3
Manufacturer CYStech Electronics
File Size 607.33 KB
Description 20V P-CHANNEL Enhancement Mode MOSFET
Datasheet download datasheet MTP2301N3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 1/9 20V P-Channel Enhancement Mode MOSFET MTP2301N3 BVDSS ID@TA=25°C, VGS=-4.5V RDSON(TYP)@VGS=-4.5V, ID=-2.8A RDSON(TYP)@VGS=-2.5V, ID=-2A -20V -3.
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