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NX6342EP Datasheet LASER DIODE

Manufacturer: California Eastern Labs

Datasheet Details

Part number NX6342EP
Manufacturer California Eastern Labs
File Size 899.28 KB
Description LASER DIODE
Download NX6342EP Download (PDF)

General Description

The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

Data Sheet R08DS0050EJ0100 Rev.1.00 Jan 19, 2012 APPLICATIONS • 10 Gb/s BASE-LR/LW (IEEE802.3ae)

Overview

A Business Partner of Renesas Electronics Corporation.

Preliminary NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW.

Key Features

  • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA ηd = 0.23 W/A TC =.
  • 5 to +85°C φ 5.6 mm 6.0 mm R08DS0050EJ0100 Rev.1.00 Jan 19, 2012 Page 1 of 5 A Business Partner of Renesas Electronics Corporation. NX6342EP Chapter Title.