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CJD200 Datasheet NPN Power Transistor

Manufacturer: Central Semiconductor

Overview: CJD200 NPN CJD210 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR CJD200 and CJD210 are complementary silicon power transistors manufactured in a surface mount package designed for high current amplifier applications.

MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 8.0 V Continuous Collector Current IC 5.0 A Peak Collector Current ICM 10 A Continuous Base Current IB 1.0 A Power Dissipation PD 12.5 W Power Dissipation (TA=25°C) PD 1.4 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 10 °C/W Thermal Resistance ΘJA 89.3 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=40V 100 nA ICBO VCB=40V, TC=125°C 100 µA IEBO VEB=8.0V 100 nA BVCEO IC=10mA 25 V VCE(SAT) IC=500mA, IB=50mA 0.3 V VCE(SAT) IC=2.0A, IB=200mA 0.75 V VCE(SAT) IC=5.0A, IB=1.0A 1.8 V VBE(SAT) IC=5.0A, IB=1.0A 2.5 V VBE(ON) VCE=1.0V, IC=2.0A 1.6 V hFE VCE=1.0V, IC=500mA 70 hFE VCE=1.0V, IC=2.0A 45 180 hFE VCE=2.0V, IC=5.0A 10 fT VCE=10V, IC=100mA, f=10MHz 65 MHz Cob VCB=10V, IE=0, f=0.1MHz (CJD200) 80 pF Cob VCB=10V, IE=0, f=0.1MHz (CJD210) 120 pF R4 (22-August 2023) CJD200 NPN CJD210 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DPAK CASE - MECHANICAL OUTLINE                LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER w w w.

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