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CJD350 Datasheet SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS

Manufacturer: Central Semiconductor

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General Description

: The CENTRAL SEMICONDUCTOR CJD340 and CJD350 are complementary silicon power transistors manufactured in a surface mount package, and designed for high voltage general purpose applications.

MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 3.0 V Continuous Collector Current IC 500 mA Peak Collector Current ICM 750 mA Power Dissipation PD 15 W Power Dissipation (TA=25°C) PD 1.56 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 8.33 °C/W Thermal Resistance ΘJA 80.1 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=300V 100 µA ICEO VCE=300V 100 µA IEBO VEB=3.0V 100 µA BVCEO IC=1.0mA 300 V VCE(SAT) IC=100mA, IB=10mA (CJD340) 1.0 V VCE(SAT) IC=100mA, IB=10mA (CJD350) 2.6 V VBE(ON) VCE=10V, IC=1.0A (CJD340) 1.5 V VBE(ON) VCE=10V, IC=1.0A (CJD350) 2.0 V hFE VCE=10V, IC=50mA 30 240 fT VCE=10V, IC=50mA, f=10MHz 10 MHz R6 (22-August 2023) CJD340 NPN CJD350 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DPAK CASE - MECHANICAL OUTLINE                LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER w w w.

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Overview

CJD340 NPN CJD350 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS w w w.

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