Full PDF Text Transcription for CP764X (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CP764X. For precise diagrams, and layout, please refer to the original PDF.
PROCESS Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip CP764X www.DataSheet4U.com PROCESS DETAILS Process Die Size Die Thickness Gate Bonding P...
View more extracted text
et4U.com PROCESS DETAILS Process Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 6 INCH WAFER 62,600 PRINCIPAL DEVICE TYPES CMLDM8002A CMPDM8002A CTLDM8002A-M621 EPITAXIAL PLANAR 21.7 x 17.7 MILS 5.5 MILS 4.7 x 4.7 MILS 6.1 x 7.9 MILS Al-Si - 35,000Å Au - 12,000Å R1 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP764X Typical Electrical Characteristics R1 (22-March 2010) w w w. c e n t r a l s e m i .
CP764X Datasheet
