CPD05 Datasheet | Central Semiconductor

PROCESS General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip .. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 51 x 51 MILS 10.2 MILS 36 x 36 MILS Ni/Au - 5,000Å/2,000Å Ni/Au - 5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 4,250 PRINCIPAL DEVICE TYPES 1N3611 thru 1N3614 1N4001 thru 1N4007 1N4245 thru 1N4249 1N5059 thru 1N5062 1N5391 thru 1N5399 1N5614 thru 1N5622 CMR1-02 Series CMR1-02M Series R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i . c o...