CTLDM303N-M832DS Key Features
- Low rDS(ON) (0.078Ω MAX @ VGS=2.5V)
- High current (ID=3.6A)
- Low gate charge
- MECHANICAL OUTLINE
- Part: CTLDM303N-M832DS
- Manufacturer: Central Semiconductor (official site)
- Size: 300.79 KB
Related Central Semiconductor Datasheets
| Part Number | Description |
|---|---|
| CTLDM7590 | SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CTLDM8002A-M621 | SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CTLDM8120-M832D | SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CTLHR10-06 | SILICON HYPERFAST RECOVERY RECTIFIER |
| CTLM1034-M832D | SURFACE MOUNT SILICON NPN TRANSISTOR AND SCHOTTKY RECTIFIER |
CTLDM303N-M832DS Description
The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. TLM832DS CASE MARKING CODE:.