CTLDM7590 Key Features
- ESD protection up to 2kV
- Power dissipation: 125mW
- Low rDS(ON)
- Low threshold voltage
- Ultra small, ultra low profile 0.6mm x 0.8mm x 0.4mm
- MECHANICAL OUTLINE
- Part: CTLDM7590
- Manufacturer: Central Semiconductor (official site)
- Size: 450.77 KB
Related Central Semiconductor Datasheets
| Part Number | Description |
|---|---|
| CTLDM303N-M832DS | SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CTLDM8002A-M621 | SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CTLDM8120-M832D | SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CTLHR10-06 | SILICON HYPERFAST RECOVERY RECTIFIER |
| CTLM1034-M832D | SURFACE MOUNT SILICON NPN TRANSISTOR AND SCHOTTKY RECTIFIER |
CTLDM7590 Description
The CENTRAL SEMICONDUCTOR CTLDM7590 is an enhancement-mode P-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics. 2 TLM3D6D8 CASE APPLICATIONS:.