Download CZT5551E Datasheet PDF
CZT5551E datasheet preview
CZT5551E page 2
Page 2

CZT5551E Key Features

  • High Collector Breakdown Voltage 250V
  • Low Leakage Current 50nA MAX
  • Low Saturation Voltage 100mV MAX @ 50mA
  • plementary Device: CZT5401E
  • SOT-223 Surface Mount Package
  • VCE(SAT)
  • VCE(SAT)
  • Enhanced specification
  • Continued: (TA=25°C unless otherwise noted)
  • Enhanced specification

Other CZT5551E Datasheets

Manufacturer Part Number Description
Central Semiconductor Corp Logo Central Semiconductor CZT5551 SURFACE MOUNT SILICON NPN TRANSISTOR
Kexin Logo Kexin Semiconductor CZT5551 NPN Transistors
Slkor Logo Slkor Micro Semicon CZT5551 NPN Transistor Epitaxial Planar Transistor
MLSM Logo MLS Microelectronics CZT5551 NPN Transistor
SeCoS Logo SeCoS Halbleitertechnologie GmbH CZT5551-C NPN Silicon Medium Power Transistor

CZT5551E Description

The CENTRAL SEMICONDUCTOR CZT5551E is an NPN Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage. FULL PART NUMBER SOT-223 CASE APPLICATIONS: General purpose switching and amplification Telephone applications MAXIMUM RATINGS:.