CZT5551 Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR CZT5551 is a silicon NPN transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL UNITS VCBO VCEO VEBO 600 m A TJ, Tstg -65 to +150 °C ΘJA °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS UNITS ICBO VCB=120V 50 n A ICBO VCB=120V, TA=100°C 50 µA IEBO VEB=4.0V 50 n A BVCBO IC=100µA 180 V BVCEO IC=1.0m A 160...