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CZT5551E - SURFACE MOUNT NPN SILICON TRANSISTOR

General Description

The CENTRAL SEMICONDUCTOR CZT5551E is an NPN Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage.

General purpose switching and amplification T

Key Features

  • High Collector Breakdown Voltage 250V.
  • Low Leakage Current 50nA MAX.
  • Low Saturation Voltage 100mV MAX @ 50mA.
  • Complementary Device: CZT5401E.
  • SOT-223 Surface Mount Package SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 250 220 6.0 600 2.0 -65 to +150 62.5 UNITS V V V mA W °C °C/W.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CZT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5551E is an NPN Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage.