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MJE210 - COMPLEMENTARY SILICON POWER TRANSISTORS

Download the MJE210 datasheet PDF. This datasheet also covers the MJE200 variant, as both devices belong to the same complementary silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications.

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Note: The manufacturer provides a single datasheet file (MJE200-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJE200 NPN MJE210 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD PD TJ, Tstg ΘJA ΘJC 40 25 8.0 5.0 10 1.0 1.5 15 -65 to +150 83.4 8.