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CEM4559 - Dual MOSFET

This page provides the datasheet information for the CEM4559, a member of the CEM4559-Chino Dual MOSFET family.

Features

  • 60V, 4.5A, RDS(ON) = 55mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. -60V, -3.5A, RDS(ON) = 105mΩ @VGS = -10V. RDS(ON) = 160mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 7 D2 6 D2 5 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. 8 SO-8 1 1 S1 2 G1 3 S2 4 G2.

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Datasheet preview – CEM4559

Datasheet Details

Part number CEM4559
Manufacturer Chino-Excel Technology
File Size 142.50 KB
Description Dual MOSFET
Datasheet download datasheet CEM4559 Datasheet
Additional preview pages of the CEM4559 datasheet.

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Full PDF Text Transcription

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CEM4559 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 60V, 4.5A, RDS(ON) = 55mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. -60V, -3.5A, RDS(ON) = 105mΩ @VGS = -10V. RDS(ON) = 160mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 7 D2 6 D2 5 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. 8 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 60 P-Channel -60 Units V V A A W C ±20 4.5 20 2.0 -55 to 150 ±20 -3.
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