* 20V, 60A RDS(ON) < 6.5mΩ @ VGS = 4.5V RDS(ON) < 10mΩ @ VGS = 2.5V
* Advanced Trench Technology
* Excellent RDS(ON) and Low Gate Charge
* Lead free produ.
JMTK2006A
JMT N-channel Enhancement Mode Power MOSFET
Features
* 20V, 60A RDS(ON) < 6.5mΩ @ VGS = 4.5V RDS(ON) < 10mΩ @ VGS = 2.5V
* Advanced Trench Technology
* Excellent RDS(ON) and Low Gate Charge
* Lead free product is acquired.
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