* VDS = 20V,ID =6A RDS(ON) (Typ.) =22mΩ @ VGS=4.5V RDS(ON)(Typ.) =27mΩ @ VGS=2.5V
* High Power and current handing capability
* Lead free product is acquir.

General Features
* VDS = 20V,ID =6A RDS(ON) (Typ.) =22mΩ @ VGS=4.5V RDS(ON)(Typ.) =27mΩ @ VGS=2.5V
* High Po.

N-Channel Enhancement Mode Power MOSFET

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