D
* VDS =30V，ID =100A
* RDS(ON)(Typ.)4mΩ @ Vgs=10V
* RDS(ON)(Typ.)7mΩ @ Vgs=4.5V Schematic diagram
* High density cell design for ultra low Rdson
.

MXD30N100 s G General Features D
* VDS =30V，ID =100A
* RDS(ON)(Typ.)4mΩ @ Vgs=10V
* RDS(ON)(Typ.)7mΩ @ .

The MXD30N100 uses advanced trench technology and design to provide excellent RDS(ON), with low gate charge . It can be used in a wide variety of applications. MXD30N100 s G General Features D
* VDS =30V，ID =100A
* RDS(ON)(Typ.)4mΩ @ Vgs=.

MXD1000

MXD1005

MXD1013

MXD1210

MXD1810

MXD1811

MXD1812

MXD1813

MXD1815

MXD1816

MXD1817

MXD1818

MXD2002A

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts