CPC5603C Key Features
- Low on resistance 8 ohms
- Breakdown voltage 415V minimum
- High input impedance
- Low input and output leakage
- Small package size SOT-223
- PC Card (PCMCIA) patible
- PCB Space and Cost Savings
- Part: CPC5603C
- Manufacturer: Clare
- Size: 267.38 KB
Other CPC5603C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
IXYS |
CPC5603C | N-Channel FET |
|
IXYS |
CPC5603CTR | N-Channel FET |
|
IXYS |
CPC5603 | N-Channel FET |
CPC5603C Description
The CPC5603C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telemunications.
CPC5603C Applications
- Support ponent for LITELINK™ Data Access Arrangement (DAA)