KTC3875GR-G - General Purpose Transistor

Features

- High hFE - Low noise Circuit Diagram 1 Base Collector 3 2 Emitter 0.055(1.40) 0.047(1.20) SOT-23 0.118(3.00) 0.110(2.80) 3 1 : BASE 2 :.

Comchip

Datasheet Details

Part number	KTC3875GR-G
Manufacturer	Comchip
File Size	123.46 KB
Description	General Purpose Transistor
Datasheet	KTC3875GR-G Datasheet

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General Purpose Transistor KTC3875GR-G (NPN) RoHS Device Features - High hFE - Low noise Circuit Diagram 1 Base Collector 3 2 Emitter 0.055(1.40) 0.047(1.20) SOT-23 0.118(3.00) 0.110(2.80) 3 1 : BASE 2 : EMITTER 3 : COLLECTOR 12 0.079(2.00) 0.071(1.80) Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Collector power dissipation PC 150 mW Thermal resistance from junction to ambient RθJA 833 °C/W Junction temperature range TJ 150 °C Storage temperature range Tstg -55~+150 °C 0.045(1.15) 0.035(0.90) 0.006(0.15) 0.003(0.08) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.004(0.10) max 0.020(0.50) 0.

Published: Jul 23, 2017 |