900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Comset Semiconductors

2N6051 Datasheet Preview

2N6051 Datasheet

(2N6050 - 2N6052) POWER COMPLEMENTARY SILICON TRANSISTORS

No Preview Available !

PNP 2N6050 – 2N6051 – 2N6052
POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington
configuration mounted in Jedec TO-3 metal case.
They are inteded for use in power linear and low frequency switching applications.
The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
IE=0
VCEO
Collector-EmitterVoltage
www.DataSheet.net/
IB=0
VCEX
VEBO
IC
ICM
IB
PT
TJ
Ts
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
VBE= 1.5 V
IC=0
@ TC < 25°
Value
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
-60
-80
-100
-60
-80
-100
-60
-80
-100
-5.0
-12
-20
-200
150
200
-65 to +200
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.17
Unit
V
V
V
V
A
A
mA
W
°C
Unit
°C/W
17/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/




Comset Semiconductors

2N6051 Datasheet Preview

2N6051 Datasheet

(2N6050 - 2N6052) POWER COMPLEMENTARY SILICON TRANSISTORS

No Preview Available !

PNP 2N6050 – 2N6051 – 2N6052
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ MAx Unit
ICEX
ICEO
IEBO
VCEO(SUS)
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff
Current
VCE= VCEX =-60 V, VBE=1.5 V
VCE= VCEX =-80 V, VBE=1.5 V
VCE= VCEX =-100 V
VBE=1.5 V
VCE= VCEX =-60 V, VBE=1.5 V
TC=150°C
VCE= VCEX =-80 V, VBE=1.5 V
TC=150°C
VCE= VCEX =-100 V
VBE=1.5 V, TC=150°C
VCE=-30 Vdc, IB=0
VCE=-40 Vdc, IB=0
VCE=-50 Vdc, IB=0
VEB=-5 V
www.DataSheet.net/
Collector-Emitter
Sustaining Voltage IC=-0.1 A
(*)
VCE(SAT)
VBE(SAT)
VBE(ON)
Collector-Emitter
saturation Voltage
(*)
IC=-6 A, IB=-24 mA
IC=-12 A, IB=-120 mA
Base-Emitter
Saturation Voltage IC=-12 A, IB=-120 mA
(*)
Base-Emitter
Voltage (*)
IC=-6 A, VCE=-3 V
fT
Transition
Frequency
IC=-5 A, VCE=-3 V, f=1 MHz
VCE=-3 V, IC=-6.0 A
hFE
DC Current Gain
(*)
VCE=-3.0 V, IC=-12 A
(*) Pulse Width 300 µs, Duty Cycle 2.0%
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
17/10/2012
COMSET SEMICONDUCTORS
-
-
-
-
-
-
-
-
-
-
-
-
-60
-80
-100
-
-
-
-
4
750
100
-
- -500 µA
-
-
- -5 mA
-
-
- -1.0 mA
-
-
- -2.0 mA
-
--
- -V
--
- -2.0
V
- -3.0
- -4 V
- -2.8 V
- - MHz
- 18000 -
--
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number 2N6051
Description (2N6050 - 2N6052) POWER COMPLEMENTARY SILICON TRANSISTORS
Maker Comset Semiconductors
PDF Download

2N6051 Datasheet PDF






Similar Datasheet

1 2N6050 Bipolar PNP Device
Seme LAB
2 2N6050 (2N6050 - 2N6052) POWER COMPLEMENTARY SILICON TRANSISTORS
Comset Semiconductors
3 2N6050 Trans Darlington PNP 60V 12A 3-Pin(2+Tab) TO-3 Sleeve
New Jersey Semiconductor
4 2N6050 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Central Semiconductor
5 2N6050 Silicon PNP Power Transistors
Inchange Semiconductor
6 2N6050 Power Transistor
Solid State
7 2N6051 PNP DARLINGTON POWER SILICON TRANSISTOR
Microsemi Corporation
8 2N6051 (2N6050 - 2N6052) POWER COMPLEMENTARY SILICON TRANSISTORS
Comset Semiconductors
9 2N6051 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Central Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy