Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BD410. For precise diagrams, and layout, please refer to the original PDF.
SEMICONDUCTORS BD410 NPN EPITAXILA SILICON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors mounted in a TO-126 plastic package. AF-amplifier for...
View more extracted text
ower transistors mounted in a TO-126 plastic package. AF-amplifier for high supply voltage They are intended for control circuit, vertical output stages in TVsets, and general purpose applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM PT tJ ts tL Collector-Base Voltage Ratings Value 500 www.DataSheet.net/ Unit V V V A A W Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Total Power Dissipation Junction Temperature Storage Temperature range 325 5 1 1.5 Ta =25°C Tc =25°C 1.25 20 -55 to +125 -55 to +125 260 °C Lead Temperature 1.
BD410 Datasheet
