* Package
* 3rd generation SiC MOSFET technology
* Optimized package with separate driver source pin Tab
* 8mm of creepage distance between drain and source Drain
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
C3M0040120K Datasheet (0.99 MB)
C3M0040120K
Cree
0.99 MB
Silicon carbide power mosfet.
VDS 1200 V C3M0040120K ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Channel Enhancement Mode .
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