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C3M0040120K Datasheet Silicon Carbide Power MOSFET

Manufacturer: Cree (now Wolfspeed)

Overview: VDS 1200 V C3M0040120K ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Channel Enhancement.

Key Features

  • Package.
  • 3rd generation SiC MOSFET technology.
  • Optimized package with separate driver source pin Tab.
  • 8mm of creepage distance between drain and source Drain.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system e.

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