CGH60030D
CGH60030D is GaN HEMT Die manufactured by Cree.
30 W, 6.0 GHz, GaN HEMT Die
Cree’s CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths pared to Si and GaAs transistors.
PN: CGH60030D
Features
APPLICATIONS
- 15 dB Typical Small Signal Gain at 4 GHz
- 12 dB Typical Small Signal Gain at 6 GHz
- 30 W Typical PSAT
- 28 V Operation
- High Breakdown Voltage
- High Temperature Operation
- Up to 6 GHz Operation
- High Efficiency
- 2-Way Private Radio
-...
