CGH60030D datasheet by Cree (now Wolfspeed).
| Part number | CGH60030D |
|---|---|
| Datasheet | CGH60030D-Cree.pdf |
| File Size | 501.62 KB |
| Manufacturer | Cree (now Wolfspeed) |
| Description | GaN HEMT Die |
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CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths pared to Si and GaAs transistors.
View all Cree (now Wolfspeed) datasheets
| Part Number | Description |
|---|---|
| CGH60015D | GaN HEMT Die |
| CGH27015 | GaN HEMT |
| CGH27015F | GaN HEMT |
| CGH27030F | GaN HEMT |
| CGH27060F | GaN HEMT |
| CGH31240F | GaN HEMT |
| CGH35015 | GaN HEMT |
| CGH35015F | GaN HEMT |
| CGH35030F | GaN HEMT |
| CGH35060F1 | GaN HEMT |
