CGHV35060MP Key Features
- Reference design amplifier 3.1
- 3.5 GHz
- 75W Typical output power
- 14.5 dB power gain
- 67% Drain efficiency
- Internally pre-matched on input, unmatched output
- April 2015
- Part: CGHV35060MP
- Manufacturer: Cree
- Size: 265.41 KB
Related Cree Datasheets
| Part Number | Description |
|---|---|
| CGHV35150 | GaN HEMT |
| CGHV35400F | GaN HEMT |
| CGHV31500F | GaN HEMT |
| CGHV14250 | GaN HEMT |
| CGHV14500 | GaN HEMT |
CGHV35060MP Description
PRELIMINARY CGHV35060MP 60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations Cree’s CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz while the input matched transistor provides optimal gain, power and efficiency in a small 6.5mm x 4.4mm...